CS14N25A8R mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.25Ω)
* Low Gate Charge (Typical Data:22.7nC)
* Low Reverse transfer capacitances(Typical:13pF)
* 10.
Power switch circuit of adaptor and charger.
250
V
14
A
100
W
0.20
Ω
Absolute（TJ= 25℃ unless otherwise specif.
CS14N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor.
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